Application Properties of ZnO and AZO Thin Films Obtained by the ALD Method

نویسندگان

چکیده

The thin layers of ZnO and ZnO: Al (Al doped zinc oxide—AZO) were deposited by the atomic deposition layer (ALD) method on silicon glass substrates. structures using diethylzinc (DEZ) deionized water as oxygen precursors. A precursor trimethylaluminum (TMA) was used to introduce aluminum dopant. present study ALD-deposited AZO films motivated their applications in photovoltaics. We attempted expose several properties such films. Structural, optical (including ellipsometric measurements) electrical investigations performed. discussed relations between samples with different fractions properties.

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ژورنال

عنوان ژورنال: Energies

سال: 2021

ISSN: ['1996-1073']

DOI: https://doi.org/10.3390/en14196271